Graphenesilicon schottky diodes for photodetection abstract. We have fabricated graphenesilicon schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. Graphenesilicon gs schottky junctions have been demonstrated as an efficient architecture for photodetection. The ideality factor is also evaluated for bilayer, three layer, and multiple layer graphenesilicon schottky diodes at various temperatures. After experimental discovery in 2004, graphene is one of the most extensively studied materials in last 15 years.
Graphene barristor, a triode device with a gatecontrolled. We present the optoelectronic characterization of graphenesilicon schottky junctions, fabricated by transferring cvdgraphene on flat. Tunable conductive properties of graphene in terahertz and farinfrared regimes provide a prominent way to control electromagnetic waves. Various routes and architectures have been employed in the past. Graphenesilicon schottky diodes for photodetection ieee xplore. Functionalized graphenesilicon chemidiode h2 sensor with.
These metrics are regularly updated to reflect usage leading up to the last few days. Herman,2 farhan rana,1 jiwoong park,3 and michael g. Here, we utilize scanning photocurrent measurements to investigate the spatial. Ab graphenesilicon schottky diode photodetectors possess beneficial properties such as high responsivities and detectivities, broad spectral wavelength operation and high operating speeds. Pdf we present the optoelectronic characterization of graphenesilicon schottky junctions, fabricated by transferring cvdgraphene on flat. Novel device architecture based on graphene schottky diode. Experimentally, we show this structure will give rise to different transmission. Graphenesilicon schottky diodes nano letters acs publications.
As a result, a thorough understanding of the physics and the potentialities of this device is still missing. Developing grapheneorganic hybrid electrodes for silicon based schottky devices a thesis submitted to the graduate school of engineering and sciences of. The vanishing density of states at the graphene dirac point enables fermi level tuning and hence schottky barrier height. Pdf developing grapheneorganic hybrid electrodes for. We have fabricated graphenesilicon schottky diodes by depositing mechanically exfoliated graphene on. We present an efficient schottkydiode detection scheme for terahertz thz radiation, implemented on the material system epitaxial graphene on silicon carbide sic. Spatial fluctuations in barrier height at the graphene. Measurements of ideality factor, schottky barrier and series resistance 3. Moreover, a grsi junction presents features that are absent in ms diodes. We show that medium ntype doping results in the highest rectification. Graphene schottky junction on pillar patterned silicon substrate. Grsi schottky diodes are characterized by a higher ideality factor n 2 than metalsemiconductor devices n.
These results indicate that the number of graphene layers and the ambient temperature are major influences for the ideality factor of graphenesilicon schottky diodes. In order to quantify the performance of the photodetector, quantum efficiency, bandwidth and dark current density are numerically calculated. Electrical and optical characterization of graphenegermanium schottky junctions supervisor. Hybrid graphenesilicon schottky photodiode with intrinsic. Forwardbias diode parameters, electronic noise, and photoresponse of graphenesilicon schottky junctions with an interfacial native oxide layer yanbin an,1 ashkan behnam,2 eric pop,2,a gijs bosman,1 and ant ural1,b 1department of electrical and computer engineering, university of florida, gainesville, florida 32611, usa. When the grsi junction is used as a photodiode, graphene acts not only as anti. The resulting currentvoltage characteristics exhibit rectifying. Sisio 2 substrate and were metallized with layers of 204040 nm of gealpd in sequence. Graphenesilicon schottky heterojunctions for optoelectronic applications. The ideality factor of the graphenezno nanowire schottky diode is 1. Citations are the number of other articles citing this article, calculated by crossref and updated daily. The schottky junction solar cells can be extended to other semiconducting materials in which graphene serves multiple functions as active junction layer, charge.
Fabrication and characterization of grapheneonsilicon. Characterization of graphenesilicon schottky barrier diodes using impedance spectroscopy chanyoung yim,1,2 niall mcevoy,2 and georg s. Below room temperature, the reverse current grows exponentially. Spencer1 1school of electrical and computer engineering, cornell university, ithaca, new york 14853, usa 2school of applied and engineering physics, cornell university, ithaca, new york 14853, usa. The sp2 bonded carbon atoms in honeycomb geometry in the atomic thickness leads to use of graphene in many applications including but not limited to sensors, field effect transistor, batteries, photo detectors, super capacitors, diodes. The schottky barriers have been observed at bulk, highly ordered pyrolytic graphitesilicon interfaces, but no photocurrents could be measured. High responsivity and quantum efficiency of graphene.
The iv characteristics measured at 100, 300, and 400 k indicate that temperature. Graphenesilicon schottky diodes chunchung chen, mehmet aykol, chiachi chang, a. Schottky diodes were investigated in terms of their sensing behavior toward h2. Characterization of graphenesilicon schottky barrier. Graphene schottky junction on pillar patterned silicon. Here, we demonstrate gs schottky junction photodetec graphene turns 15. A selfpowered highperformance graphenesilicon ultraviolet. Large modulation on the device current onoff ratio of 105 is achieved by adjusting the gate voltage to control the graphenesilicon schottky barrier. It was found that all devices exhibited current rectification properties, and the supernatant graphene devices have the best performance. Fabrication and characterization of grapheneonsilicon schottky diode for.
By combining equations 1 and 2 and fitting the jv curves of the devices in dark, the schottky barriers are estimated to be 0. Here, a specific contact pattern scheme with interdigitated schottky and grapheneinsulatorsilicon gis structures is explored to experimentally demonstrate highly sensitive. A multilayer graphene film was grown on an intrinsic. Graphenesilicon schottky diodes by antonio di bartolomeo, filippo giubileo, giuseppe luongo, laura iemmo, nadia martucciello, gang niu, mirko fraschke, oliver skibitzki, thomas schroeder and.
Schottky barrier inhomogeneities at the interface of few. The iv characteristics measured at 100, 300, and 400 k indicate that. Request pdf graphenesilicon schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates, the graphenesilicon schottky barriers are observed. In this paper, the design of a graphenesilicon photodetector working at both 1. Schottky junctions formed between graphene flakes and silicon ntype substrates exhibit good photovoltaic conversion efficiency while. The device is a schottky diode and the absorption mechanism is based on the internal photoemission effect. The vanishing density of states at the graphene dirac point enables fermi level tuning and hence schottky barrier height modulation by a single anodecathode bias. Gate modulation of graphenezno nanowire schottky diode. However, the response speed of such devices for free space light detection has so far been limited to 10s100s of khz for wavelength. Graphenesilicon gsi heterojunction based devices have been demonstrated as high responsivity photodetectors that are potentially compatible with semiconductor technology. In this study, grapheneonsilicon process technology was developed to fabricate a power rectifier schottky diode for efficiency improvement in high operating. The interfacing of graphene with a semiconductor creates a schottky junction, with the formation of ripples on graphene being common. Here we report the modulation of the electric transport properties of graphenezno nanowire schottky diode by gate voltage v g. Schottky graphenesilicon photodetectors based on internal.
Such gsi schottky junction diodes are typically in parallel with gated gsilicon dioxide sio2si areas, where the graphene is contacted. Graphenesemiconductor interface is important for the applications in electronic and optoelectronic devices. Highly conductive semitransparent graphene sheets are combined with an n. The studies of the past few years have demonstrated that graphene can form junctions with 3d or 2d semiconducting materials which have rectifying characteristics and behave as excellent schottky diodes. Graphenesilicon heterostructures present a schottky characteristic and have potential applications for solar cells and photodetectors. Pdf junction investigation of graphenesilicon schottky diodes. Schottky junctions formed between graphene flakes and silicon ntype substrates exhibit good photovoltaic conversion efficiency while graphenepsi devices have poor light harvesting capability. An efficient terahertz rectifier on the graphenesic. Fabrication and characterization of grapheneonsilicon schottky. The team applied thin film polycrystalline semiconductor contacts to a graphene channel, to construct lateral schottky varactor diodes. Modulation of farinfrared light transmission by graphene. Moreover, the local effect of light absorption on the jv characteristics of graphenesilicon interfaces has not been studied.
Pdf graphenesilicon schottky diodes for photodetection. We report on a threeterminal active device, a graphene variablebarrier barristor gb, in which the key is an atomically sharp interface between graphene and hydrogenated silicon. Graphenesilicon schottky diodes for photodetection arxiv. Towards substrate engineering of graphenesilicon schottky.
The resulting currentvoltage characteristics exhibit rectifying diode behavior with a barrier energy of 0. Article views are the countercompliant sum of full text article downloads since november 2008 both pdf and html across all institutions and individuals. Graphenesilicon schottky diodes for photodetection ieee. Caianiello and centro interdipartimentale nanomates. Junction investigation of graphenesilicon schottky diodes. In this paper, we explore the photonelectric properties of the graphenesilicon heterostructure and its application in modulating the transmission of farinfrared light. Graphenesilicon schottky diode photodetectors possess beneficial properties such as high responsivities and detectivities, broad spectral wavelength operation and high operating speeds. Various routes and architectures have been employed in the past to fabricate devices. Schottky barrier inhomogeneities at the interface of few layer epitaxial graphene and silicon carbide shriram shivaraman,1 lihong h. Here, we demonstrate gs schottky junction photodetectors fabricated on a silicononinsulator substrate soi with response speeds. Graphenesilicon gsi heterostructures have been studied extensively in the past years for applications such as photodiodes, photodetectors, and solar cells, with a growing focus on efficiency and performance. Forwardbias diode parameters, electronic noise, and. Grsi schottky diodes are characterized by a higher ideality factor than metal semiconductor devices 31. Duesberg1,2,a 1school of chemistry, trinity college dublin, dublin 2, dublin, ireland 2centre for research on adaptive nanostructures and nanodevices crann, trinity college dublin, dublin 2, dublin, ireland.
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